发明授权
US06825123B2 Method for treating semiconductor processing components and components formed thereby
有权
用于处理由此形成的半导体处理部件和部件的方法
- 专利标题： Method for treating semiconductor processing components and components formed thereby
- 专利标题（中）： 用于处理由此形成的半导体处理部件和部件的方法
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申请号： US10414563申请日： 2003-04-15
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公开(公告)号： US06825123B2公开(公告)日： 2004-11-30
- 发明人: Andrew G. Haerle , Richard F. Buckley , Richard R. Hengst
- 申请人： Andrew G. Haerle , Richard F. Buckley , Richard R. Hengst
- 主分类号： H01L21311
- IPC分类号： H01L21311
摘要：
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.