摘要:
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.
摘要:
The invention relates to a vertical rack for semiconductor wafer processing having strictly horizontally disposed arms wherein each arms has a rounded tip.
摘要:
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.
摘要:
A semiconductor processing component includes a substrate and a layer overlying the substrate. The layer has a composition ReAyO1.5+2y, wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si1−aGea), 0.25≦y≦1.2, and 0≦a≦1.