发明授权
- 专利标题: Substrate processing method
- 专利标题(中): 基板加工方法
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申请号: US10025453申请日: 2001-12-26
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公开(公告)号: US06827973B2公开(公告)日: 2004-12-07
- 发明人: Shinji Nagashima
- 申请人: Shinji Nagashima
- 优先权: JP11-193671 19990707
- 主分类号: B05D312
- IPC分类号: B05D312
摘要:
After a first processing solution is spread over the front surface of a substrate and the temperature of the front surface of the substrate is regulated at a predetermined substrate temperature, a second processing solution is spread over the front surface of the substrate. The second processing solution can be spread while the front surface temperature of the substrate is maintained at the predetermined substrate temperature. Hence, a layer insulating film with good adhesion properties can be formed uniformly on the front surface of the substrate, and the quantity of the processing solution to be used can be reduced.
公开/授权文献
- US20020045011A1 Substrate processing method 公开/授权日:2002-04-18