A system for monitoring and controlling a boron phosphorous doped silicon oxide (BPSG) deposition and reflow process is provided. The system includes one or more light sources, each light source directing light to one or more portions of a wafer upon which BPSG is deposited. Light reflected from the BPSG is collected by a measuring system, which processes the collected light. Light passing through the BPSG may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the conformality of the BPSG deposition of the respective portions of the wafer. The measuring system provides BPSG deposition related data to a processor that determines the BPSG deposition of the respective portions of the wafer. The system also includes a plurality of reflow controlling devices, each such device corresponding to a respective portion of the wafer and providing for the heating and/or cooling thereof. The processor selectively controls the reflow controlling devices so as to regulate temperature of the respective portions of the wafer.