发明授权
US06828247B2 Method for etching organic film, method for fabricating semiconductor device and pattern formation method
失效
蚀刻有机膜的方法，制造半导体器件的方法和图案形成方法
- 专利标题： Method for etching organic film, method for fabricating semiconductor device and pattern formation method
- 专利标题（中）： 蚀刻有机膜的方法，制造半导体器件的方法和图案形成方法
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申请号： US10214754申请日： 2002-08-09
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公开(公告)号： US06828247B2公开(公告)日： 2004-12-07
- 发明人: Hideo Nakagawa , Toshio Hayashi , Yasuhiro Morikawa
- 申请人： Hideo Nakagawa , Toshio Hayashi , Yasuhiro Morikawa
- 优先权： JP2000-155843 20000526
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
An organic film is etched by using plasma generated from an etching gas including a first gas containing, as a principal constituent, a compound including carbon, hydrogen and nitrogen and a second gas including a nitrogen component.
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