发明授权
- 专利标题： Enhanced transistor gate using E-beam radiation
- 专利标题（中）： 使用电子束辐射的增强型晶体管栅极
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申请号： US10017855申请日： 2001-12-14
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公开(公告)号： US06828259B2公开(公告)日： 2004-12-07
- 发明人: Philip A. Fisher , Chih-Yuh Yang , Marina V. Plat , Russell R.A. Callahan , Ashok M. Khathuria
- 申请人： Philip A. Fisher , Chih-Yuh Yang , Marina V. Plat , Russell R.A. Callahan , Ashok M. Khathuria
- 主分类号： H01L2126
- IPC分类号： H01L2126
摘要：
A process for forming a transistor having a gate width of less than 70 nm is disclosed herein. The process includes E-beam irradiation a gate patterned on a photoresist layer, trimming the gate patterned on the photoresist layer, and etching the gate patterned on the photoresist layer to a polysilicon layer disposed below the photoresist layer.
公开/授权文献
- US20040209411A1 ENHANCED TRANSISTOR GATE USING E-BEAM RADIATION 公开/授权日：2004-10-21
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