发明授权
- 专利标题: Semiconductor device with vertical transistors
- 专利标题(中): 具有垂直晶体管的半导体器件
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申请号: US10253901申请日: 2002-09-25
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公开(公告)号: US06828626B2公开(公告)日: 2004-12-07
- 发明人: Makoto Oikawa , Hiroki Etou , Hirotoshi Kubo , Shouji Miyahara
- 申请人: Makoto Oikawa , Hiroki Etou , Hirotoshi Kubo , Shouji Miyahara
- 优先权: JP2001-290751 20010925; JP2002-261011 20020906
- 主分类号: H01L2978
- IPC分类号: H01L2978
摘要:
In a conventional power MOSFET, an electric field concentration occurs at a gate electrode bottom portion on the outermost periphery of an operating area, thereby causing a deterioration in high voltage strength between the drain and the source, or between the collector and emitter. In this invention, a trench at the outermost periphery of an operating area is shallower than trenches of the operating area. Thereby, the electric field concentration at the gate electrode bottom portion on the outermost periphery of the operating area is relieved, and a deterioration in high voltage strength between the drain and source is suppressed. Furthermore, by narrowing the outermost peripheral trench aperture portion, trenches different in depth can be formed by an identical step.