发明授权
- 专利标题： Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same
- 专利标题（中）： 使用原料气体制造碳化硅晶体的制造方法及其制造方法
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申请号： US09985120申请日： 2001-11-01
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公开(公告)号： US06830618B2公开(公告)日： 2004-12-14
- 发明人: Kazukuni Hara , Masao Nagakubo , Shoichi Onda
- 申请人： Kazukuni Hara , Masao Nagakubo , Shoichi Onda
- 优先权： JP2000-343664 20001110
- 主分类号： C30B3500
- IPC分类号： C30B3500
摘要：
A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.