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公开(公告)号：US20120152166A1
公开(公告)日：2012-06-21
申请号：US13325259
申请日：2011-12-14
申请人： Yuuichirou TOKUDA , Kazukuni Hara , Jun Kojima
发明人： Yuuichirou TOKUDA , Kazukuni Hara , Jun Kojima
IPC分类号： C30B25/00
CPC分类号： C30B29/36 , C30B25/14 , C30B25/165 , Y10T117/10 , Y10T117/1008
摘要： An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a seed crystal by supplying a material gas from below the seed crystal. The apparatus includes a heating container and a base located in the heating container. The seed crystal is mounded on the base. The apparatus further includes a first inlet for causing a purge gas to flow along an inner wall surface of the heating container, a purge gas source for supplying the purge gas to the first inlet, a second inlet for causing the purge gas to flow along an outer wall surface of the base, and a mechanism for supporting the base and for supplying the purge gas to the base from below the base.
摘要翻译： 用于制造碳化硅单晶的装置通过从晶种下面供应原料气而在晶种上生长碳化硅单晶。 该装置包括加热容器和位于加热容器中的基座。 晶种沉积在基底上。 该装置还包括用于使吹扫气体沿着加热容器的内壁表面流动的第一入口，用于将净化气体供应到第一入口的净化气体源，用于使净化气体沿着 底座的外壁表面，以及用于支撑底座并用于从底部下方将净化气体供给到基座的机构。
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公开(公告)号：US20120152165A1
公开(公告)日：2012-06-21
申请号：US13325233
申请日：2011-12-14
申请人： Kazukuni HARA , Yuuichirou Tokuda
发明人： Kazukuni HARA , Yuuichirou Tokuda
IPC分类号： C30B23/02
CPC分类号： C30B25/165 , C30B25/12 , C30B25/14 , C30B29/36
摘要： An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a surface of a seed crystal made from a silicon carbide single crystal substrate by supplying a material gas for silicon carbide from below the seed crystal. The apparatus includes a base having a first side and a second side opposite to the first side. The seed crystal is mounded on the first side of the base. The apparatus further includes a purge gas introduction mechanism for supporting the base and for supplying a purge gas to the base from the second side of the base. The base has a purge gas introduction path for discharging the supplied purge gas from the base toward an outer edge of the seed crystal.
摘要翻译： 用于制造碳化硅单晶的装置通过从晶种下面提供用于碳化硅的材料气体，在由碳化硅单晶衬底制成的晶种的表面上生长碳化硅单晶。 该装置包括具有与第一侧相对的第一侧和第二侧的底座。 晶种在基底的第一面上堆积。 该装置还包括净化气体引入机构，用于支撑基座并用于从基座的第二侧向基座提供净化气体。 基座具有吹扫气体引入路径，用于将供应的净化气体从基底朝向晶种的外边缘排出。
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公开(公告)号：US06670282B2
公开(公告)日：2003-12-30
申请号：US09954209
申请日：2001-09-18
IPC分类号： H01L2131
CPC分类号： C30B23/02 , C30B23/00 , C30B23/002 , C30B29/36 , Y10S438/909 , Y10S438/931
摘要： To produce a SiC crystal in a shape which is used as a wafer, a guide is disposed around a SiC crystal substrate so as to cover a peripheral portion of the SiC crystal substrate. Temperature of the guide may be made higher than the sublimation temperature of the SiC when a SiC crystal is disposed upon and caused to grow on the SiC crystal substrate, thereby controlling and restricting the SiC crystal growth in the direction of the guide. Additionally, when the guide is formed in a substantially hexagonal tube shape, the SiC crystal can be produced in a hexagonal pole shape. In this case, when alignment is made between each diagonal passing through a center of the hexagon shape of the guide and specific direction ( or of the SiC crystal substrate), the SiC crystal becomes aligned accordingly.
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公开(公告)号：US07217323B2
公开(公告)日：2007-05-15
申请号：US10814179
申请日：2004-04-01
申请人： Naohiro Sugiyama , Yasuo Kitou , Emi Makino , Kazukuni Hara , Kouki Futatsuyama , Atsuto Okamoto
发明人： Naohiro Sugiyama , Yasuo Kitou , Emi Makino , Kazukuni Hara , Kouki Futatsuyama , Atsuto Okamoto
IPC分类号： C30B25/14
CPC分类号： C30B29/36 , C23C16/325 , C23C16/4412 , C23C16/45591 , C23C16/46 , C30B25/02 , C30B25/10 , C30B25/14 , C30B25/16 , Y10T117/10
摘要： A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.
摘要翻译： 制造碳化硅单晶的方法包括以下步骤：将反应室中的晶种设置为晶种; 将原料气体引入到反应室中; 从基材生长碳化硅单晶; 在气流路径中从衬底的上游侧加热气体; 将衬底的温度保持在比气体低的预定温度，使得单晶从衬底生长; 在通过基板之后加热作为未反应的原料气体的一部分气体，并且不会造成晶体生长; 并且利用吸收体吸收未反应的原料气体中未反应的原料气体成分。
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公开(公告)号：US06451112B1
公开(公告)日：2002-09-17
申请号：US09686232
申请日：2000-10-12
申请人： Kazukuni Hara , Kouki Futatsuyama , Shoichi Onda , Fusao Hirose , Emi Oguri , Naohiro Sugiyama , Atsuto Okamoto
发明人： Kazukuni Hara , Kouki Futatsuyama , Shoichi Onda , Fusao Hirose , Emi Oguri , Naohiro Sugiyama , Atsuto Okamoto
IPC分类号： C30B2936
CPC分类号： C30B23/00 , C30B29/36 , Y10T117/10
摘要： A crucible for growing a single crystal therein has a seed crystal attachment portion and a peripheral portion surrounding the seed crystal attachment portion through a gap provided therebetween. The seed crystal attachment portion has a support surface for holding a seed crystal on which the single crystal is to be grown, and the support surface is recessed from a surface of the peripheral portion. The seed crystal is attached to the support surface to cover an entire area of the support surface. Accordingly, no poly crystal is formed on the seed crystal attachment portion, and the single crystal can be grown on the seed crystal with high quality.
摘要翻译： 用于在其中生长单晶的坩埚具有通过其间设置的间隙包围晶种附着部的晶种附着部和周缘部。 晶种附着部分具有用于保持其上生长单晶的晶种的支撑表面，并且支撑表面从周边部分的表面凹陷。 籽晶附着到支撑表面以覆盖支撑表面的整个区域。 因此，在晶种附着部上不形成多晶体，能够以高质量在晶种上生长单晶。
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公开(公告)号：US5976936A
公开(公告)日：1999-11-02
申请号：US893221
申请日：1997-07-15
申请人： Takeshi Miyajima , Norihito Tokura , Kazukuni Hara , Hiroo Fuma
发明人： Takeshi Miyajima , Norihito Tokura , Kazukuni Hara , Hiroo Fuma
IPC分类号： H01L21/04 , H01L29/08 , H01L29/24 , H01L29/78 , H01L21/336 , H01L21/8234
CPC分类号： H01L29/66068 , H01L29/7828 , H01L29/0847 , H01L29/1608 , H01L29/4236 , Y10S438/981
摘要： A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are successively laminated on top of one another. An n.sup.+ type source region 6 is formed in a predetermined region of the surface in the p type silicon carbide semiconductor layer 3, and a trench 9 is formed so as to extend through the n.sup.+ type source region 6 and the p type silicon carbide semiconductor layer 3 into the n.sup.- type silicon carbide semiconductor layer 2. A thin-film semiconductor layer (n type or p type) 11a is extendedly provided on the surface of the n.sup.+ type source region 6, the p type silicon carbide semiconductor layer 3, and the n.sup.- type silicon carbide semiconductor layer 2 in the side face of the trench 9.
摘要翻译： 提供了具有高阻断电压，低损耗和低阈值电压的碳化硅半导体器件。 n +型碳化硅半导体衬底1，n型碳化硅半导体衬底2和p型碳化硅半导体层3相互层叠在一起。 在p型碳化硅半导体层3的表面的预定区域中形成n +型源极区6，并且形成沟槽9，以延伸穿过n +型源极区6和p型碳化硅半导体层 在n型碳化硅半导体层2的表面上延伸设置有薄膜半导体层（n型或p型）11a，在n +型源极区6，p型碳化硅半导体层3的表面上， n型碳化硅半导体层2在沟槽9的侧面。
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7.发明授权Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects 失效制造具有双氧化膜形成以减少膜缺陷的SiC半导体器件的方法
公开(公告)号：US5723376A
公开(公告)日：1998-03-03
申请号：US745958
申请日：1996-11-07
IPC分类号： H01L21/04 , H01L29/423 , H01L29/78 , H01L21/265 , H01L21/44 , H01L21/48
CPC分类号： H01L29/7813 , H01L21/049 , H01L29/42368 , H01L29/66068 , Y10S438/931
摘要： A groove is formed on the surface of a semiconductor substrate composed of silicon carbide and a first thermal oxidation film is formed by executing thermal oxidation on a damaged layer of groove inner walls. Then, the first thermal oxidation film is removed so that the damaged layer can be removed. Since a second thermal oxidation film is formed after the damaged layer is removed, the second thermal oxidation film is uniform. A silicon carbide semiconductor device can be achieved with less side etching because substantially a (0001) carbon face of a cubic system is chosen as the plane orientation of the semiconductor substrate.
摘要翻译： 在由碳化硅构成的半导体基板的表面上形成有槽，通过对凹槽内壁的损伤层进行热氧化而形成第一热氧化膜。 然后，去除第一热氧化膜，从而可以去除损伤层。 由于在损坏层被去除之后形成第二热氧化膜，所以第二热氧化膜是均匀的。 可以通过较少的侧面蚀刻实现碳化硅半导体器件，因为基本上选择立方晶系的（0001）碳面作为半导体衬底的平面取向。
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8.发明授权公开(公告)号：US09328431B2
公开(公告)日：2016-05-03
申请号：US13325233
申请日：2011-12-14
申请人： Kazukuni Hara , Yuuichirou Tokuda
发明人： Kazukuni Hara , Yuuichirou Tokuda
CPC分类号： C30B25/165 , C30B25/12 , C30B25/14 , C30B29/36
摘要： An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a surface of a seed crystal made from a silicon carbide single crystal substrate by supplying a material gas for silicon carbide from below the seed crystal. The apparatus includes a base having a first side and a second side opposite to the first side. The seed crystal is mounted on the first side of the base. The apparatus further includes a purge gas introduction mechanism for supporting the base and for supplying a purge gas to the base from the second side of the base. The base has a purge gas introduction path for discharging the supplied purge gas from the base toward an outer edge of the seed crystal.
摘要翻译： 用于制造碳化硅单晶的装置通过从晶种下面提供用于碳化硅的材料气体，在由碳化硅单晶衬底制成的晶种的表面上生长碳化硅单晶。 该装置包括具有与第一侧相对的第一侧和第二侧的底座。 晶种安装在基座的第一侧上。 该装置还包括净化气体引入机构，用于支撑基座并用于从基座的第二侧向基座提供净化气体。 基座具有吹扫气体引入路径，用于将供应的净化气体从基底朝向晶种的外边缘排出。
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公开(公告)号：US08882911B2
公开(公告)日：2014-11-11
申请号：US13325259
申请日：2011-12-14
申请人： Yuuichirou Tokuda , Kazukuni Hara , Jun Kojima
发明人： Yuuichirou Tokuda , Kazukuni Hara , Jun Kojima
CPC分类号： C30B29/36 , C30B25/14 , C30B25/165 , Y10T117/10 , Y10T117/1008
摘要： An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a seed crystal by supplying a material gas from below the seed crystal. The apparatus includes a heating container and a base located in the heating container. The seed crystal is mounded on the base. The apparatus further includes a first inlet for causing a purge gas to flow along an inner wall surface of the heating container, a purge gas source for supplying the purge gas to the first inlet, a second inlet for causing the purge gas to flow along an outer wall surface of the base, and a mechanism for supporting the base and for supplying the purge gas to the base from below the base.
摘要翻译： 用于制造碳化硅单晶的装置通过从晶种下面供应原料气而在晶种上生长碳化硅单晶。 该装置包括加热容器和位于加热容器中的基座。 晶种沉积在基底上。 该装置还包括用于使吹扫气体沿着加热容器的内壁表面流动的第一入口，用于将净化气体供应到第一入口的净化气体源，用于使净化气体沿着 底座的外壁表面，以及用于支撑底座并用于从底部下方将净化气体供应到基座的机构。
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公开(公告)号：US09644286B2
公开(公告)日：2017-05-09
申请号：US14126520
申请日：2012-07-24
申请人： Kazukuni Hara
发明人： Kazukuni Hara
摘要： A silicon carbide single crystal manufacturing apparatus includes a vacuum chamber, a pedestal on which a seed crystal is disposed, an inlet of source gas, a reaction chamber extending from a bottom surface of the vacuum chamber toward the pedestal, a first heating device disposed around an outer periphery of the reaction chamber, a second heating device disposed around an outer periphery of the pedestal, and an outlet disposed outside the first and second heating devices in the vacuum chamber. After the source gas supplied from the reaction chamber is supplied toward the pedestal, the source gas is let flow outward in a radial direction of the silicon carbide single crystal between the reaction chamber and the silicon carbide single crystal and is discharged through the outlet.
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