发明授权
US06831852B2 Semiconductor memory device having a latch circuit and storage capacitor
有权
具有锁存电路和存储电容器的半导体存储器件
- 专利标题: Semiconductor memory device having a latch circuit and storage capacitor
- 专利标题(中): 具有锁存电路和存储电容器的半导体存储器件
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申请号: US10442439申请日: 2003-05-22
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公开(公告)号: US06831852B2公开(公告)日: 2004-12-14
- 发明人: Yoshiyuki Ishigaki , Tsuyoshi Koga , Yasuhiro Fujii
- 申请人: Yoshiyuki Ishigaki , Tsuyoshi Koga , Yasuhiro Fujii
- 优先权: JP2002-370446 20021220
- 主分类号: G11C1124
- IPC分类号: G11C1124
摘要:
A semiconductor device includes: a capacitor: an access transistor with impurity regions, controlling input/output of charge stored in the capacitor, one of the impurity regions being electrically connected to the capacitor; a latch circuit located above a silicon substrate, and storing the potential of a storage node of the capacitor; and a bit line connected to the other of the impurity regions of the access transistor T6. At least a portion of the latch circuit is formed above the bit line.
公开/授权文献
- US20040120179A1 Semiconductor memory device and semiconductor device 公开/授权日:2004-06-24
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