发明授权
- 专利标题: Plasma processing apparatus and method
- 专利标题(中): 等离子体处理装置及方法
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申请号: US10139281申请日: 2002-05-07
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公开(公告)号: US06833051B2公开(公告)日: 2004-12-21
- 发明人: Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
- 申请人: Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
- 优先权: JP8-315885 19961127
- 主分类号: H05H100
- IPC分类号: H05H100
摘要:
A plasma processing apparatus includes a vacuum chamber having a structure that surrounds a space where plasma is generated, a sample stage disposed in the chamber on which a sample to be processed is placed and coil antenna providing an electric field to the space. The structure has a non-conductive member surrounding the space and a conductive member covering the non-conductive member, both of which are disposed between the antenna and the space. The conductive member is electrically floated at least when the plasma is generated.
公开/授权文献
- US20020124963A1 Plasma processing apparatus and method 公开/授权日:2002-09-12
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