发明授权
US06833746B2 Pre-buffer voltage level shifting circuit and method 有权
预缓冲电压电平移位电路及方法

  • 专利标题: Pre-buffer voltage level shifting circuit and method
  • 专利标题(中): 预缓冲电压电平移位电路及方法
  • 申请号: US10123983
    申请日: 2002-04-16
  • 公开(公告)号: US06833746B2
    公开(公告)日: 2004-12-21
  • 发明人: Oleg DrapkinGrigori Temkine
  • 申请人: Oleg DrapkinGrigori Temkine
  • 主分类号: H03L500
  • IPC分类号: H03L500
Pre-buffer voltage level shifting circuit and method
摘要:
A pre-buffer voltage level shifting circuit includes a multi-supply voltage level shifting circuit having single gate oxide devices coupled to produce a pre-buffer output signal to an output buffer. The pre-buffer output signal has a level within normal gate voltage operating levels of the single gate oxide devices for each of the least a plurality of supply voltages. In one embodiment, the multi-supply voltage level shifting circuit includes a current mirror coupled to at least one of the first or second power supply voltage and also uses a non-linear device, such as a transistor configured as a diode, which is coupled to the output of current mirror. The non-linear device is coupled to receive a digital input signal from a signal source, such as from a section of core logic. A switching circuit coupled to the non-linear device selectively activates the non-linear device based on a level of the digital input signal. The circuit, in effect, shifts the core logic supply voltage up to provide efficient and safe control of single oxide gate output buffer transistor devices, such as p-channel devices.
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