- 专利标题: In-situ pellicle monitor
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申请号: US10064442申请日: 2002-07-15
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公开(公告)号: US06835502B2公开(公告)日: 2004-12-28
- 发明人: Michael Straight Hibbs
- 申请人: Michael Straight Hibbs
- 主分类号: G03F900
- IPC分类号: G03F900
摘要:
A mask structure and method of quantitatively measuring pellicle degradation in production photomasks by measuring overlay in test structures on the mask. A structure is located in a high transmission region close to a transition region between a low transmission and a high transmission region of the mask such that pellicle degradation impacts the printing of the object. A second structure is located in low transmission region such that the printing of the second structure overlaps the first and provides a measure of pellicle degradation.
公开/授权文献
- US20040009411A1 In-situ pellicle monitor 公开/授权日:2004-01-15
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