A first axis MEM tunneling/capacitive sensor and method of making same. Cantilever beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arrange sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer.