发明授权
US06838229B2 Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same
有权
用于形成厚膜，光致抗蚀剂基材的化学放大负性光致抗蚀剂组合物和使用其形成凸块的方法
- 专利标题： Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same
- 专利标题（中）： 用于形成厚膜，光致抗蚀剂基材的化学放大负性光致抗蚀剂组合物和使用其形成凸块的方法
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申请号： US10194298申请日： 2002-07-15
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公开(公告)号： US06838229B2公开(公告)日： 2005-01-04
- 发明人: Yasushi Washio , Koji Saito , Toshiki Okui , Hiroshi Komano
- 申请人： Yasushi Washio , Koji Saito , Toshiki Okui , Hiroshi Komano
- 申请人地址： JP Kanagawa
- 专利权人： Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人： Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人地址： JP Kanagawa
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2001-229680 20010730
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/038 ; G03F7/38
摘要：
A chemically amplified negative photoresist composition is used for the formation of thick films having a thickness of 20 to 150 μm and includes (A) an alkali-soluble resin, (B) a compound which generates an acid upon irradiation with active light or radiant ray, and (C) a compound which serves as a crosslinking agent in the presence of an acid. The alkali-soluble resin (A) includes (a1) a novolak resin having a weight average molecular weight of from 5000 to 10000, and (a2) a polymer containing at least a hydroxystyrene constitutional unit and having a weight average molecular weight of less than or equal to 5000.
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