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    Positive photoresist composition for the formation of thick films, photoresist film and method of forming bumps using the same
    7.
    发明授权
    Positive photoresist composition for the formation of thick films, photoresist film and method of forming bumps using the same 有权
    用于形成厚膜的正性光致抗蚀剂组合物，光致抗蚀剂膜以及使用其形成凸块的方法

    公开(公告)号：US06641972B2

    公开(公告)日：2003-11-04

    申请号：US10090170

    申请日：2002-03-05

    申请人： Kouichi Misumi ,  Koji Saito ,  Toshiki Okui ,  Hiroshi Komano

    发明人： Kouichi Misumi ,  Koji Saito ,  Toshiki Okui ,  Hiroshi Komano

    IPC分类号： G03F7023

    CPC分类号： G03F7/0233 ,  G03F7/022

    摘要： A positive photoresist composition includes an alkali-soluble novolak resin (A), an alkali-soluble acrylic resin (B) and a quinonediazido-group-containing compound (C) and is used for the formation of a thick film 5 to 100 &mgr;m thick. The ingredient (B) includes 30% to 90% by weight of a unit (b1) derived from a polymerizable compound having an ether bond and 2% to 50% by weight of a unit (b2) derived from a polymerizable compound having a carboxyl group. The composition is applied on a substrate and thereby yields a photoresist film. Likewise, the composition is applied onto a substrate on an electronic part, is patterned, is plated and thereby yields bumps.

    摘要翻译： 正型光致抗蚀剂组合物包括碱溶性酚醛清漆树脂（A），碱溶性丙烯酸树脂（B）和含醌二叠氮基的化合物（C），并用于形成厚度为5至100μm厚的厚膜 。 成分（B）含有30重量％〜90重量％的衍生自具有醚键的聚合性化合物的单元（b1）和2重量％〜50重量％的来自具有羧基的聚合性化合物的单元（b2） 组。 将组合物施加在基材上，从而得到光致抗蚀剂膜。 同样地，将组合物施加到电子部件上的基板上，被图案化，被镀覆，从而产生凸块。

    Fluorine-containing monomeric ester compound for base resin in photoresist composition
    9.
    发明授权
    Fluorine-containing monomeric ester compound for base resin in photoresist composition 有权
    用于光致抗蚀剂组合物中的基础树脂的含氟单体酯化合物

    公开(公告)号：US06846949B2

    公开(公告)日：2005-01-25

    申请号：US10732418

    申请日：2003-12-11

    申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiroshi Komano

    发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiroshi Komano

    IPC分类号： C07C69/00 ,  C07C69/653 ,  C07C69/52 ,  C07C69/62

    CPC分类号： C07C69/653 ,  C07C2602/42 ,  C07C2603/74 ,  G03F7/0046 ,  G03F7/0397

    摘要： The invention discloses a novel ester compound of an unsaturated carboxylic acid represented by the general formula in which R1 is preferably a hydrogen atom or methyl group, R2 is preferably a trifluoromethyl group, R3 is a non-aromatic polycyclic hydrocarbon group or, preferably, an adamantyl group and R4 is preferably a hydrogen atom or methyl group. This unsaturated ester compound is polymerizable to give a (co)polymeric resin which can be used as a base resinous ingredient in a photoresist composition for light exposure with ultraviolet light of a very short wavelength by virtue of the high transparency to the short-wavelength light. A synthetic method for the preparation of the novel ester compound is disclosed.

    摘要翻译： 本发明公开了一种由通式表示的不饱和羧酸的酯化合物，其中R 1优选为氢原子或甲基，R 2优选为三氟甲基，R 3为非芳族 多环烃基或优选金刚烷基，R 4优选为氢原子或甲基。 这种不饱和酯化合物是可聚合的，得到（共）聚合物树脂，其可以用作光致抗蚀剂组合物中的基础树脂成分，用于通过对短波长光的高透明度而具有非常短的波长的紫外光进行曝光 。 公开了一种制备新型酯化合物的合成方法。

    Chemical-sensitization photoresist composition
    10.
    发明授权
    Chemical-sensitization photoresist composition 有权
    化学增感光刻胶组合物

    公开(公告)号：US06388101B1

    公开(公告)日：2002-05-14

    申请号：US09562458

    申请日：2000-05-02

    申请人： Hideo Hada ,  Kazufumi Sato ,  Hiroshi Komano

    发明人： Hideo Hada ,  Kazufumi Sato ,  Hiroshi Komano

    IPC分类号： C07D30512

    CPC分类号： C07D307/33 ,  G03F7/0392 ,  Y02P20/55

    摘要： Proposed is a chemical-sensitization positive-working photoresist composition for photolithographic patterning in the manufacture of semiconductor devices having high transparency even to ultraviolet light of very short wavelength such as ArF excimer laser beams of 193 nm wavelength to exhibit high photosensitivity and capable of giving a patterned resist layer with high pattern resolution. The composition comprises (A) a resinous ingredient which is subject to an increase of the solubility in an aqueous alkaline developer solution in the presence of an acid and (B) a radiation-sensitive acid-generating compound. Characteristically, the resinous ingredient as the component (A) is a (meth)acrylic copolymer of which from 20% to 80% by moles of the monomeric units are derived from a (meth)acrylic acid ester of which the ester-forming group has a specific oxygen-containing heterocyclic ring structure.

    摘要翻译： 提出了一种用于制造半导体器件的化学增感正性光致抗蚀剂组合物，即使对于非常短波长的紫外光也具有高透明度，例如193nm波长的ArF准分子激光束，以显示高光敏性，并且能够给出 具有高图案分辨率的图案化抗蚀剂层。 组合物包含（A）在酸的存在下在碱性显影剂水溶液中溶解度增加的树脂成分和（B）辐射敏感的产酸化合物。 特征在于，作为（A）成分的树脂成分是（甲基）丙烯酸系共聚物，20〜80摩尔％的单体单元衍生自成酯基的（甲基）丙烯酸酯 特定的含氧杂环结构。