Invention Grant
- Patent Title: MEMS element manufacturing method
- Patent Title (中): MEMS元件制造方法
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Application No.: US10468757Application Date: 2002-12-16
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Publication No.: US06838304B2Publication Date: 2005-01-04
- Inventor: Koichi Ikeda , Takashi Kinoshita
- Applicant: Koichi Ikeda , Takashi Kinoshita
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Rader, Fishman & Grauer PLLC
- Agent Ronald P. Kananen
- Priority: JP2001-394881 20011226
- International Application: PCTJP02/13128 WO 20021216
- International Announcement: WO0305578 WO 20030710
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B3/00 ; H01L21/00

Abstract:
The present invention is directed to manufacturing methods of electrostatic type MEMS devices. The manufacturing method of the present invention includes the steps of forming a substrate side electrode on a substrate, forming a fluid film before or after forming a sacrificial layer, further forming a beam having a driving side electrode on a planarized surface of the fluid film, and finally, removing the sacrificial layer. Furthermore, performing the foregoing method planarizes the surface of a driving side electrode, reduces fluctuations in the shape of a beam, and improves the performance and the uniformity of the MEMS device.
Public/Granted literature
- US20040077119A1 Mems element manufacturing method Public/Granted day:2004-04-22
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