发明授权
US06838318B1 Clad plate for forming interposer for semiconductor device, interposer for semiconductor device, and method of manufacturing them
失效
用于形成用于半导体器件的插入件的包层板,用于半导体器件的插入件及其制造方法
- 专利标题: Clad plate for forming interposer for semiconductor device, interposer for semiconductor device, and method of manufacturing them
- 专利标题(中): 用于形成用于半导体器件的插入件的包层板,用于半导体器件的插入件及其制造方法
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申请号: US10009196申请日: 2000-06-09
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公开(公告)号: US06838318B1公开(公告)日: 2005-01-04
- 发明人: Kinji Saijo , Kazuo Yoshida , Hiroaki Okamoto , Shinji Ohsawa
- 申请人: Kinji Saijo , Kazuo Yoshida , Hiroaki Okamoto , Shinji Ohsawa
- 申请人地址: JP Tokyo
- 专利权人: Toyo Kohan Co., Ltd.
- 当前专利权人: Toyo Kohan Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Browdy and Neimark, P.L.L.C.
- 优先权: JP11164454 19990610
- 国际申请: PCTJP00/03746 WO 20000609
- 国际公布: WO0077850 WO 20001221
- 主分类号: H01L23/31
- IPC分类号: H01L23/31 ; H01L23/495 ; H01L23/498 ; H05K3/06 ; H05K3/28 ; H05K3/40 ; H01L21/44 ; B21D33/00 ; B32B15/20
摘要:
A clad plate for forming an interposer for a semiconductor device which can be manufactured at low cost and has good characteristics, an interposer for a semiconductor device, and a method of manufacturing them. Copper foil materials (19, 24, 33) forming conductive layers (10, 17, 18) and nickel plating (20, 21) forming etching stopper layers (11, 12) are formed and pressed to form a clad plate (34) for forming an interposer for a semiconductor device. Thus, a clad plate (34) for forming an interposer for a semiconductor device is manufactured. The clad plate (34) is selectively etched to form a columnar conductor (17), and an insulating layer (13) is formed on the copper foil material forming a wiring layer (10). A bump (18) for connection of a semiconductor chip and the wiring layer (10) are formed on the opposite side to the side on which the columnar conductor (17) is formed. Thus, an interposer for a semiconductor device is manufactured.