Invention Grant
- Patent Title: Area-efficient stack capacitor
- Patent Title (中): 区域效率的堆叠电容
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Application No.: US10456648Application Date: 2003-06-05
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Publication No.: US06838339B2Publication Date: 2005-01-04
- Inventor: Heon Lee
- Applicant: Heon Lee
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8242 ; H01L21/20

Abstract:
An area-efficient stack capacitor for use in an integrated circuit comprises, in one embodiment, a layer of elemental platinum (Pt) as a bottom electrode, a layer of hemispherical grained poly Si on top of the Pt bottom electrode, a second layer of Pt deposited over the layer of hemispherical grained poly Si, a layer of dielectric deposited over the second layer of Pt, and a third layer of Pt deposited over the dielectric layer, where the third layer of Pt acts as upper electrode.
Public/Granted literature
- US20040248365A1 AREA-EFFICIENT STACK CAPACITOR Public/Granted day:2004-12-09
Information query
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