Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US10670288Application Date: 2003-09-26
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Publication No.: US06838833B2Publication Date: 2005-01-04
- Inventor: Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
- Applicant: Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Hitachi, Ltd.,Hitachi High-Technologies Corporation
- Current Assignee: Hitachi, Ltd.,Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/00 ; H01L21/683 ; H01J7/24
Abstract:
A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.
Public/Granted literature
- US20040061449A1 Plasma processing apparatus Public/Granted day:2004-04-01
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