公开(公告)号：US20080237195A1

公开(公告)日：2008-10-02

申请号：US12018527

申请日：2008-01-23

申请人： Masaaki Iwasa ,  Takeshi Tsukamoto ,  Hideto Nogiwa ,  Tetsuya Kuwano ,  Yoshihisa Maeda ,  Hiromi Kobayashi ,  Ryujiro Udo

发明人： Masaaki Iwasa ,  Takeshi Tsukamoto ,  Hideto Nogiwa ,  Tetsuya Kuwano ,  Yoshihisa Maeda ,  Hiromi Kobayashi ,  Ryujiro Udo

IPC分类号： F01D5/20 ,  B23K31/02

CPC分类号： B23K26/24 ,  B23K26/206 ,  B23K33/00 ,  B23K2101/001 ,  F01D5/3061 ,  F04D29/026 ,  F04D29/2222 ,  F05D2230/234 ,  F05D2230/237 ,  F05D2230/64 ,  F05D2300/43 ,  F05D2300/603 ,  Y10T29/49336 ,  Y10T29/49968

摘要： Blades are connected to the surface of a disk and slots are formed in the surface of a shroud, which is opposite from the other surface of the shroud where the blades are to be welded. The blades are arranged on the opposite surface from the slots and a laser beam is applied from the surface in which the slots are formed, to weld the shroud and the blades. If powder is melted and put in the slots formed for welding in the shroud to fill the slots, thermal distortion occurs. On the other hand, if the slots are left empty, a problem of degrading the fluid performance arises. To solve these problems, components are installed on the surfaces of the slots on the opposite side from the blades after the blades and the shroud in which the slots are formed are welded. Alternatively, the slots are filled with a material different from that of the shroud, such as a resin. With this configuration, distortion caused by welding heat can be reduced without degrading the fluid performance. This method can be applied to the case where the blades are formed on the surface of the shroud, not on the surface of the disk, and to the slots formed in the disk after the blades and the disk are laser-welded.

摘要翻译： 叶片连接到盘的表面，并且槽形成在护罩的表面中，护罩的表面与待焊接的刀片的护罩的另一个表面相对。 刀片设置在与槽相反的表面上，并且从其中形成槽的表面施加激光束以焊接护罩和刀片。 如果粉末熔化并放入形成为用于在护罩中焊接的槽以填充槽，则发生热变形。 另一方面，如果槽是空的，则出现降低流体性能的问题。 为了解决这些问题，在叶片和其中形成有狭槽的护罩焊接之后，将部件安装在与叶片相对侧上的槽的表面上。 或者，槽被填充有与护罩不同的材料，例如树脂。 利用这种结构，可以降低焊接热引起的变形，而不降低流体性能。 该方法可以应用于在叶片和盘被激光焊接之后叶片形成在护罩的表面上而不是在盘的表面上的情况下以及形成在盘中的槽。

公开(公告)号：US06812725B2

公开(公告)日：2004-11-02

申请号：US10083255

申请日：2002-02-27

申请人： Ryujiro Udo ,  Masatsugu Arai ,  Manabu Edamura

发明人： Ryujiro Udo ,  Masatsugu Arai ,  Manabu Edamura

IPC分类号： G01R3100

CPC分类号： G01R31/2862

摘要： A semiconductor processing apparatus for processing a semiconductor in a processing chamber separated from the air wherein the processing chamber contains a wafer stage on which there is positioned a wafer sensor module equipped with sensor probes, each sensor probe capable of detecting at least one of electric current, voltage and temperature of an article to be processed and placed on the wafer sensor module, which is carried into the processing chamber by a transporting means for the article to be processed, and detected values by the sensor probes being converted to optical signals and led to outside of the processing chamber, can optimize conditions for processing the article easily and in a short time without lowering throughput.

摘要翻译： 一种用于处理与空气分离的处理室中的半导体的半导体处理装置，其中所述处理室包含晶片台，所述晶片台配置有配备有传感器探针的晶片传感器模块，每个传感器探针能够检测电流中的至少一个 待处理物品的电压和温度，并将其放置在通过待处理物品的输送装置输送到处理室中的晶片传感器模块上，并将传感器探针的检测值转换为光信号并引导 在处理室外部，可以在不降低生产能力的情况下，在短时间内优化处理物品的条件。

公开(公告)号：US20090095719A1

公开(公告)日：2009-04-16

申请号：US12248271

申请日：2008-10-09

申请人： Takeshi TSUKAMOTO ,  Yoshihisa MAEDA ,  Hiromi KOBAYASHI ,  Hideto NOGIWA ,  Tetsuya KUWANO ,  Ryujiro UDO ,  Masaaki IWASA

发明人： Takeshi TSUKAMOTO ,  Yoshihisa MAEDA ,  Hiromi KOBAYASHI ,  Hideto NOGIWA ,  Tetsuya KUWANO ,  Ryujiro UDO ,  Masaaki IWASA

IPC分类号： F01D5/22 ,  B23K26/00

CPC分类号： F04D29/284 ,  B23K26/144 ,  B23K26/244 ,  B23K26/28 ,  B23K33/004 ,  B23K2101/001 ,  F01D5/048 ,  F01D5/3061 ,  F04D29/023 ,  F05D2230/234 ,  Y02T50/673 ,  Y10T29/49316

摘要： A welding method for an impeller having a plurality of blades, a disc and an exterior body including a shroud welded to the plurality of blades, comprising the steps of: a first step for forming a groove having a prescribed depth and a prescribed width toward one of the blades on a surface of the disc or the exterior body, which is opposite to a surface against the blade abuts, emitting laser light toward the bottom of the groove, and performing melt-through bead welding to bond the bottom of the groove to an end of the blade in such a way that a bead formed on the back of the disc or the shroud is curved with an inward depression; and a second step for performing overlaying welding after completion of the first step by supplying a filler metal to a molten zone while the bottom of the groove is scanned with the laser light.

摘要翻译： 一种用于叶轮的焊接方法，所述叶轮具有多个叶片，盘和外部主体，所述叶片和外部主体包括焊接到所述多个叶片的罩体，包括以下步骤：第一步骤，用于形成具有规定深度和规定宽度的槽朝向一个 在与盘片相对的表面上的刀片表面上的刀片邻接，朝向凹槽的底部发射激光，并且进行熔透珠焊接以将槽的底部结合到 叶片的端部以这样的方式使得形成在盘或罩的背面上的胎圈以向内的凹陷弯曲; 以及第二步骤，通过在用激光扫描槽的底部的同时向熔融区域供应填充金属来完成第一步骤之后的覆盖焊接。

公开(公告)号：US20080017107A1

公开(公告)日：2008-01-24

申请号：US11798646

申请日：2007-05-15

申请人： Masatsugu Arai ,  Ryujiro Udo ,  Seiichiro Kanno ,  Tsuyoshi Yoshida

发明人： Masatsugu Arai ,  Ryujiro Udo ,  Seiichiro Kanno ,  Tsuyoshi Yoshida

IPC分类号： C23C16/00

CPC分类号： H01L21/67248 ,  H01J37/32082 ,  H01J2237/2001 ,  H01L21/67109

摘要： A plasma processing apparatus having an electrostatic chucking electrode that allows temperature control of a semiconductor wafer during etching process with high efficiency comprises: a holder stage comprising an electrode block S having a dielectric film 4 on the surface thereof and a coolant flow passage 6 therein, in which temperature control is performed while holding a semiconductor wafer W on the dielectric film on the surface of the electrode block; and a cooling cycle 50 including a compressor 52, a condenser 55, an expansion valve 53, a heat exchanger 54 having a heater built therein, and an evaporator, wherein the temperature control of the electrode block S is performed by using a direct-expansion-type temperature controller in which the electrode block S is used as the evaporator of the cooling cycle, and the coolant is directly circulated and expanded inside the electrode block.

摘要翻译： 一种具有静电夹持电极的等离子体处理装置，其能够高效率地进行蚀刻处理时的半导体晶片的温度控制，包括：保持台，其具有在其表面具有电介质膜4的电极块S和冷却剂流路6， 在将半导体晶片W保持在电极块的表面上的电介质膜上的同时进行温度控制; 以及包括压缩机52，冷凝器55，膨胀阀53，内置加热器的热交换器54和蒸发器的冷却循环50，其中，电极块S的温度控制通过使用直接膨胀 型温度控制器，其中电极块S用作冷却循环的蒸发器，并且冷却剂在电极块内直接循环和膨胀。

公开(公告)号：US07303998B2

公开(公告)日：2007-12-04

申请号：US11002265

申请日：2004-12-03

申请人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Ryujiro Udo ,  Motohiko Yoshigai ,  Takashi Fujii

发明人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Ryujiro Udo ,  Motohiko Yoshigai ,  Takashi Fujii

IPC分类号： H01L21/302

CPC分类号： C23C16/4581 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6719

摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.

摘要翻译： 一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为 热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。 样品保持器在样品安装的表面具有多个基本环形的凹陷部分。 设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力 。

公开(公告)号：US20070240825A1

公开(公告)日：2007-10-18

申请号：US11812289

申请日：2007-06-18

申请人： Seiichiro Kanno ,  Manabu Edamura ,  Ryujiro Udo ,  Masatsugu Arai ,  Junichi Tanaka ,  Saburo Kanai ,  Ryoji Nishio ,  Tsunehiko Tsubone ,  Toru Aramaki

发明人： Seiichiro Kanno ,  Manabu Edamura ,  Ryujiro Udo ,  Masatsugu Arai ,  Junichi Tanaka ,  Saburo Kanai ,  Ryoji Nishio ,  Tsunehiko Tsubone ,  Toru Aramaki

IPC分类号： H01L21/306

CPC分类号： H01L21/67248 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109

摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.

摘要翻译： 在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。 调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。 在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理 可以通过执行所选择的处理来减少批次内的晶片温度变化。 所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

公开(公告)号：US06897403B2

公开(公告)日：2005-05-24

申请号：US10378601

申请日：2003-03-05

申请人： Ryujiro Udo ,  Masatsugu Arai ,  Motohiko Yoshigai ,  Masanori Kadotani

发明人： Ryujiro Udo ,  Masatsugu Arai ,  Motohiko Yoshigai ,  Masanori Kadotani

IPC分类号： H01J37/32 ,  H01L21/00 ,  H01L21/683 ,  H01L21/687 ,  B23K9/00

CPC分类号： H01L21/6875 ,  H01J37/32431 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.

摘要翻译： 提供了能够更精确地处理工件的表面的等离子体处理装置。 用于在样品和样品台之间提供气体以产生用于处理样品的等离子体的等离子体处理装置包括调节装置，用于改变供给到样品的中心侧的压力和供给到外周的气体的压力 作为样品进行的处理。

公开(公告)号：US20060121195A1

公开(公告)日：2006-06-08

申请号：US11327447

申请日：2006-01-09

申请人： Ryujiro Udo ,  Masatsugu Arai ,  Masanori Kadotani

发明人： Ryujiro Udo ,  Masatsugu Arai ,  Masanori Kadotani

IPC分类号： C23C14/32 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/67069 ,  C25D11/005 ,  C25D11/026 ,  C25D11/04 ,  H01J37/32082 ,  H01L21/6831 ,  H01L21/6833

摘要： An electrostatic chuck comprising an insulating base 6, a plurality of conductive aluminum thin films 4a, 4b deposited on the surface of the base, and alumite films 2a, 2b formed by anodizing the surfaces of the conductive thin films 4a, 4b, wherein the conductive thin films 4a, 4b are each provided with a DC voltage of a different polarity so that a surface chucking a wafer 7 is electrostatically bipolar.

摘要翻译： 一种静电卡盘，其包括绝缘基体6，沉积在基底表面上的多个导电铝薄膜4a，4b和通过阳极氧化导电薄膜4a的表面形成的耐酸铝膜2a， 如图4b所示，其中导电薄膜4a，4b分别具有不同极性的DC电压，使得夹持晶片7的表面是静电双极的。

公开(公告)号：US20050242060A1

公开(公告)日：2005-11-03

申请号：US11002265

申请日：2004-12-03

申请人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Ryujiro Udo ,  Motohiko Yoshigai ,  Takashi Fujii

发明人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Ryujiro Udo ,  Motohiko Yoshigai ,  Takashi Fujii

IPC分类号： C23C16/00 ,  C23C16/458 ,  C23C16/46 ,  C23F1/00 ,  H01L21/00

CPC分类号： C23C16/4581 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6719

摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.

摘要翻译： 一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为 热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。 样品保持器在样品安装的表面具有多个基本环形的凹陷部分。 设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力 。

公开(公告)号：US20050051098A1

公开(公告)日：2005-03-10

申请号：US10655046

申请日：2003-09-05

申请人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Ryujiro Udo ,  Motohiko Yoshigai ,  Takashi Fujii

发明人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Ryujiro Udo ,  Motohiko Yoshigai ,  Takashi Fujii

IPC分类号： C23C16/00 ,  C23C16/458 ,  C23C16/46 ,  C23F1/00 ,  H01L21/00

CPC分类号： C23C16/4581 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6719

摘要： A plasma processing apparatus capable of processing a sample with high precision by adjusting the temperature of a wafer in a wide range is provided. The plasma processing apparatus for processing a sample with a plasma generated by using a gas has: a processing chamber having an inner space reduced in pressure; a sample holder on which the sample is placed, the sample holder being disposed in the processing chamber; and a plurality of openings through which the gas is introduced into the processing chamber, the plural openings being located above the sample holder, wherein the sample holder on which the sample is placed has: ring-shaped projecting portions disposed concentrically on a surface of the sample holder to have respective surfaces thereof in contact with a surface of the sample and partition a space between the surface of the sample and the surface of the sample holder into a plurality of regions; a first opening located in a first region, which is the circumferentially outermost one of the plural regions, to introduce a gas for heat transfer therethrough; and a second opening located in a second region, which is internal of the circumferentially outermost region, to allow the gas in the region to flow out therethrough.

摘要翻译： 提供了能够通过在宽范围内调整晶片的温度来高精度地处理样品的等离子体处理装置。 用于通过使用气体产生的等离子体处理样品的等离子体处理装置具有：具有减小的内部空间的处理室; 其上放置样品的样品架，所述样品架设置在所述处理室中; 以及多个开口，通过该开口将气体引入到处理室中，多个开口位于样品保持器上方，其中放置样品的样品保持器具有：同心地设置在样品保持器的表面上的环形突出部分 样品保持器，其各自的表面与样品的表面接触，并将样品表面和样品保持器的表面之间的空间分隔成多个区域; 第一开口，位于第一区域中，该第一区域是多个区域中的周向最外面的一个，以引入用于热传递的气体; 以及位于周向最外侧区域内部的第二区域中的第二开口，以允许该区域中的气体流出。