发明授权
- 专利标题： Plasma processing apparatus
- 专利标题（中）： 等离子体处理装置
-
申请号： US10670288申请日： 2003-09-26
-
公开(公告)号： US06838833B2公开(公告)日： 2005-01-04
- 发明人: Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
- 申请人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Hitachi, Ltd.,Hitachi High-Technologies Corporation
- 当前专利权人： Hitachi, Ltd.,Hitachi High-Technologies Corporation
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/00 ; H01L21/683 ; H01J7/24
摘要：
A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.
公开/授权文献
- US20040061449A1 Plasma processing apparatus 公开/授权日：2004-04-01
信息查询
