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US06841441B2 Method to produce dual gates (one metal and one poly or metal silicide) for CMOS devices using sputtered metal deposition, metallic ion implantation, or silicon implantation, and laser annealing 有权
用于使用溅射金属沉积，金属离子注入或硅注入的CMOS器件和激光退火的双栅极（一个金属和一个多晶硅或金属硅化物）的制造方法

Method to produce dual gates (one metal and one poly or metal silicide) for CMOS devices using sputtered metal deposition, metallic ion implantation, or silicon implantation, and laser annealing
摘要：
A method of fabricating first and second gates comprising the following steps. A substrate having a gate dielectric layer formed thereover is provided. The substrate having a first gate region and a second gate region. A thin first gate layer is formed over the gate dielectric layer. The thin first gate layer within the second gate region is masked to expose a portion of the thin first gate layer within the first gate region. The exposed portion of the thin first gate layer is converted to a thin third gate layer portion. A second gate layer is formed over the thin first and third gate layer portions. The second gate layer and the first and third gate layer portions are patterned to form a first gate within first gate region and a second gate within second gate region.
摘要（中）：

一种制造第一和第二栅极的方法，包括以下步骤。 提供了其上形成有栅介电层的基板。 衬底具有第一栅极区域和第二栅极区域。 在栅极电介质层上形成薄的第一栅极层。 第二栅极区域内的薄的第一栅极层被掩蔽以暴露第一栅极区域内的薄的第一栅极层的一部分。 薄的第一栅极层的暴露部分被转换成薄的第三栅极层部分。 在薄的第一和第三栅极层部分上形成第二栅极层。 第二栅极层和第一和第三栅极层部分被图案化以在第一栅极区域内形成第一栅极，在第二栅极区域内形成第二栅极。

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