发明授权
- 专利标题： Enclosed cavity formed inside a gate line of a thin film transistor and fabrication method thereof
- 专利标题（中）： 在薄膜晶体管的栅极线内形成的封闭腔及其制造方法
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申请号： US10352013申请日： 2003-01-27
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公开(公告)号： US06841798B2公开(公告)日： 2005-01-11
- 发明人: Te-Cheng Chung , Tean-Sen Jen , Ming-Tien Lin , Seok Lyul Lee
- 申请人： Te-Cheng Chung , Tean-Sen Jen , Ming-Tien Lin , Seok Lyul Lee
- 申请人地址： TW Taipei
- 专利权人： Hannstar Display Corp.
- 当前专利权人： Hannstar Display Corp.
- 当前专利权人地址： TW Taipei
- 代理机构： Thomas, Kayden, Horstemeyer & Risley
- 优先权： TW91115787A 20020716
- 主分类号： G02F1/1368
- IPC分类号： G02F1/1368 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/423 ; H01L29/49 ; G02F1/13 ; H01L21/768 ; H01L29/04 ; H01L31/36
摘要：
A thin film transistor liquid crystal display. At least a gate line and a data line define at least one pixel area. An enclosed cavity is formed in the gate line to separate the gate line into a first gate region and a second gate region. A thin film transistor has a gate electrode that is the first gate region or the second gate region, a source electrode that is an extension of the data line and is over the enclosed cavity, and a drain electrode. A pixel electrode covers the pixel area and is electrically connected to the drain electrode.
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