Invention Grant
- Patent Title: Semiconductor memory device with clock generating circuit
- Patent Title (中): 具有时钟发生电路的半导体存储器件
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Application No.: US10387503Application Date: 2003-03-14
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Publication No.: US06842396B2Publication Date: 2005-01-11
- Inventor: Takashi Kono
- Applicant: Takashi Kono
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Burns, Doane, Swecker & Mathis, LLP
- Priority: JP2002-270170 20020917
- Main IPC: G11C11/407
- IPC: G11C11/407 ; G11C7/22 ; G11C11/4076 ; G11C11/409 ; G11C7/00

Abstract:
A DLL clock control circuit determines whether or not an operating frequency is a low frequency satisfying a prescribed condition, based on signals received from a DLL circuit and a READ control circuit. When the DLL clock control circuit determines that the operating frequency is a low frequency, the DLL clock control circuit outputs a DLL clock received from the DLL circuit if a first signal to be activated in response to a READ command is activated, while when determining that an operating frequency is not a low frequency, outputting a DLL clock received from the DLL circuit if a second signal to be activated in response to an ACT command is activated. As a result, a semiconductor memory device can guarantees a data output operating in data reading and can reduce power consumption during active standby.
Public/Granted literature
- US20040052152A1 Semiconductor memory device with clock generating circuit Public/Granted day:2004-03-18
Information query
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