发明授权
- 专利标题: Method for producing SOI wafer and SOI wafer
- 专利标题(中): 制造SOI晶圆和SOI晶圆的方法
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申请号: US09857803申请日: 2000-10-13
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公开(公告)号: US06846718B1公开(公告)日: 2005-01-25
- 发明人: Hiroji Aga , Naoto Tate , Susumu Kuwabara , Kiyoshi Mitani
- 申请人: Hiroji Aga , Naoto Tate , Susumu Kuwabara , Kiyoshi Mitani
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff & Berridge, PLC
- 优先权: JP11-292134 19991014
- 国际申请: PCTJP00/07111 WO 20001013
- 国际公布: WO0128000 WO 20010419
- 主分类号: H01L21/762
- IPC分类号: H01L21/762 ; H01L21/76
摘要:
A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.