发明授权
US06846734B2 Method and process to make multiple-threshold metal gates CMOS technology
有权
制造多阈值金属门CMOS技术的方法与工艺
- 专利标题： Method and process to make multiple-threshold metal gates CMOS technology
- 专利标题（中）： 制造多阈值金属门CMOS技术的方法与工艺
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申请号： US10300165申请日： 2002-11-20
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公开(公告)号： US06846734B2公开(公告)日： 2005-01-25
- 发明人: Ricky Amos , Katayun Barmak , Diane C. Boyd , Cyril Cabral, Jr. , Meikei Leong , Thomas S. Kanarsky , Jakub Tadeusz Kedzierski
- 申请人： Ricky Amos , Katayun Barmak , Diane C. Boyd , Cyril Cabral, Jr. , Meikei Leong , Thomas S. Kanarsky , Jakub Tadeusz Kedzierski
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser
- 代理商 Robert M. Trepp, Esq.
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/28 ; H01L21/336 ; H01L21/8238 ; H01L21/84 ; H01L21/3205 ; H01L21/44 ; H01L21/4763
摘要：
Methods of forming complementary metal oxide semiconductor (CMOS) devices having multiple-threshold voltages which are easily tunable are provided. Total salicidation with a metal bilayer (representative of the first method of the present invention) or metal alloy (representative of the second method of the present invention) is provided. CMOS devices having multiple-threshold voltages provided by the present methods are also described.
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