- 专利标题： Semiconductor integrated circuit
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申请号： US10812081申请日： 2004-03-30
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公开(公告)号： US06847108B2公开(公告)日： 2005-01-25
- 发明人: Kumiko Takikawa , Satoshi Tanaka , Takashi Hashimoto , Yoshiyuki Okabe
- 申请人： Kumiko Takikawa , Satoshi Tanaka , Takashi Hashimoto , Yoshiyuki Okabe
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP
- 优先权： JP11-107545 19990415
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/82 ; H01L21/822 ; H01L23/50 ; H01L23/66 ; H03F3/187 ; H04B1/38 ; H04B1/3822 ; H01L23/48
摘要：
A pin layout which prevents degradation of a frequency characteristic of a low noise amplifier and a receiving mixer included in a semiconductor integrated circuit for dual-band transmission/reception wherein the circuit of the low noise amplifier is provided at a position where the distance from the end of a pin outside the package of the low noise amplifier to the pad is the shortest; ground pins of two low noise amplifiers and the high frequency signal pins are arranged respectively so as not to be adjacent to each other; the power source and ground pin of the low noise amplifier, and the power source and ground pin of the bias circuit are respectively separated; and high frequency signal wires do not intersect each other.
公开/授权文献
- US20040178497A1 Semiconductor integrated circuit 公开/授权日：2004-09-16