发明授权
US06849527B1 Strained silicon MOSFET having improved carrier mobility, strained silicon CMOS device, and methods of their formation
失效
具有改进的载流子迁移率的应变硅MOSFET，应变硅CMOS器件及其形成方法
- 专利标题： Strained silicon MOSFET having improved carrier mobility, strained silicon CMOS device, and methods of their formation
- 专利标题（中）： 具有改进的载流子迁移率的应变硅MOSFET，应变硅CMOS器件及其形成方法
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申请号： US10684727申请日： 2003-10-14
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公开(公告)号： US06849527B1公开(公告)日： 2005-02-01
- 发明人: Qi Xiang
- 申请人： Qi Xiang
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices
- 当前专利权人： Advanced Micro Devices
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Foley & Lardner LLP
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/336 ; H01L21/8238 ; H01L29/10 ; H01L21/425
摘要：
The mobility enhancement of a strained silicon layer is augmented through incorporation of carbon into a strained silicon lattice to which strain is also imparted by an underlying silicon germanium layer. The presence of the relatively small carbon atoms effectively increases the spacing within the strained silicon lattice and thus imparts additional strain. This enhancement may be implemented for any MOSFET device including silicon on insulator MOSFETs, and is preferably selectively implemented for the PMOS components of CMOS devices to achieve approximately equal carrier mobility for the PMOS and NMOS devices.
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