Invention Grant
US06849580B2 Method of producing biaxially textured buffer layers and related articles, devices and systems
有权
生产双轴纹理缓冲层及相关物品,装置和系统的方法
- Patent Title: Method of producing biaxially textured buffer layers and related articles, devices and systems
- Patent Title (中): 生产双轴纹理缓冲层及相关物品,装置和系统的方法
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Application No.: US10457184Application Date: 2003-06-09
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Publication No.: US06849580B2Publication Date: 2005-02-01
- Inventor: David P. Norton , Venkat Selvamanickam
- Applicant: David P. Norton , Venkat Selvamanickam
- Applicant Address: US FL Gainesville US NY Schenectady
- Assignee: University of Florida,Superpower, Inc.
- Current Assignee: University of Florida,Superpower, Inc.
- Current Assignee Address: US FL Gainesville US NY Schenectady
- Agency: Akerman Senterfitt
- Main IPC: C30B25/18
- IPC: C30B25/18 ; C30B29/22 ; H01L39/24 ; H01B12/00 ; H01F6/00 ; H01L39/00

Abstract:
A superconductor article includes a substrate and a first buffer film disposed on the substrate. The first buffer film has a uniaxial crystal texture characterized (i) texture in a first crystallographic direction that extends out-of-plane of the first buffer film with no significant texture in a second direction that extends in-plane of the first buffer film, or (ii) texture in a first crystallographic direction that extends in-plane of the first buffer film with no significant texture in a second direction that extends out-of-plane of the first buffer film. A second buffer film is disposed on the first buffer film, the second buffer film having a biaxial crystal texture. A superconductor layer can be disposed on the second buffer film. Ion-beam assisted deposition (IBAD) can be used to deposit the second buffer film.
Public/Granted literature
- US20040248743A1 METHOD OF PRODUCING BIAXIALLY TEXTURED BUFFER LAYERS AND RELATED ARTICLES, DEVICES AND SYSTEMS Public/Granted day:2004-12-09
Information query
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