发明授权
US06849878B2 Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor, and radiation-emitting semiconductor chip
有权
用于制造基于III-V族氮化物半导体的辐射发射半导体芯片的方法和辐射发射半导体芯片
- 专利标题： Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor, and radiation-emitting semiconductor chip
- 专利标题（中）： 用于制造基于III-V族氮化物半导体的辐射发射半导体芯片的方法和辐射发射半导体芯片
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申请号： US10377363申请日： 2003-02-28
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公开(公告)号： US06849878B2公开(公告)日： 2005-02-01
- 发明人: Stefan Bader , Michael Fehrer , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer
- 申请人： Stefan Bader , Michael Fehrer , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer
- 申请人地址： DE Regensburg
- 专利权人： OSRAM Opto Semiconductors GmbH
- 当前专利权人： OSRAM Opto Semiconductors GmbH
- 当前专利权人地址： DE Regensburg
- 代理商 Laurence A. Greenberg; Werner H. Stemer; Gregory L. Mayback
- 优先权： DE10042947 20000831
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01S5/343
摘要：
A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III-V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.
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