发明授权
- 专利标题: Temperature-dependent refresh cycle for DRAM
- 专利标题(中): DRAM的温度依赖刷新周期
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申请号: US10386148申请日: 2003-03-11
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公开(公告)号: US06850448B2公开(公告)日: 2005-02-01
- 发明人: Joachim Schnabel , Michael Sommer
- 申请人: Joachim Schnabel , Michael Sommer
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Fish & Richardson, PC
- 优先权: DE10214103 20020328
- 主分类号: G11C11/406
- IPC分类号: G11C11/406 ; H03K3/0231 ; G11C7/04
摘要:
A circuit for generating a refresh signal for a memory cell, includes a temperature-independent current source, a temperature-independent voltage source, and a temperature-dependent reference voltage source. A capacitor's first and second terminals are connected respectively to the temperature-independent current source, and the temperature-independent voltage source. The capacitor's first terminal is connected to a first input terminal of a comparator. The comparator's second input is connected to the temperature-dependent reference voltage source. The comparator is configured to output a refresh signal in response to a difference between voltages present at the first and second inputs thereof.
公开/授权文献
- US20030214858A1 Temperature-dependent refresh cycle for dram 公开/授权日:2003-11-20
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