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US06850448B2 Temperature-dependent refresh cycle for DRAM 有权
DRAM的温度依赖刷新周期

Temperature-dependent refresh cycle for DRAM
摘要:
A circuit for generating a refresh signal for a memory cell, includes a temperature-independent current source, a temperature-independent voltage source, and a temperature-dependent reference voltage source. A capacitor's first and second terminals are connected respectively to the temperature-independent current source, and the temperature-independent voltage source. The capacitor's first terminal is connected to a first input terminal of a comparator. The comparator's second input is connected to the temperature-dependent reference voltage source. The comparator is configured to output a refresh signal in response to a difference between voltages present at the first and second inputs thereof.
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