发明授权
- 专利标题: Method for manufacturing zinc oxide semiconductors
- 专利标题(中): 氧化锌半导体的制造方法
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申请号: US10701483申请日: 2003-11-06
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公开(公告)号: US06852623B2公开(公告)日: 2005-02-08
- 发明人: Seong-Ju Park , Kyoung-Kook Kim
- 申请人: Seong-Ju Park , Kyoung-Kook Kim
- 申请人地址: KR Kwangju
- 专利权人: Kwangju Institute of Science and Technology
- 当前专利权人: Kwangju Institute of Science and Technology
- 当前专利权人地址: KR Kwangju
- 代理机构: Oliff & Berridge, PLC
- 优先权: KR10-2003-0014397 20030307
- 主分类号: C23C14/08
- IPC分类号: C23C14/08 ; H01L21/00 ; H01L21/324 ; H01L21/363 ; H01L21/44 ; H01L21/477
摘要:
Disclosed herein is a method for manufacturing a zinc oxide semiconductor. The method comprises the steps of forming a zinc oxide thin film including a group V element as a dopant on a substrate by using a zinc oxide compound containing a group V element or an oxide thereof, charging the substrate having the zinc oxide thin film formed thereon into a chamber for thermal annealing, and thermal annealing the substrate in the chamber to activate the dopant, thereby changing the zinc oxide thin film exhibiting n-type electrical properties or insulator properties to a zinc oxide thin film exhibiting p-type electrical properties. According to the method, since a zinc oxide thin film exhibiting n-type electrical properties can be easily changed to a zinc oxide thin film exhibiting p-type electrical properties, the provision of holes required for optical devices is facilitated, thereby enabling the development of photoelectric devices such as light-emitting diodes, laser diodes and UV sensors and further extending applicability of the zinc oxide semiconductor.
公开/授权文献
- US20040175860A1 Method for manufacturing zinc oxide semiconductors 公开/授权日:2004-09-09