发明授权
US06855649B2 Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
失效
通过离子注入和热退火,在Si或绝缘体上的衬底上放置SiGe层
- 专利标题: Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
- 专利标题(中): 通过离子注入和热退火,在Si或绝缘体上的衬底上放置SiGe层
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申请号: US10299880申请日: 2002-11-19
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公开(公告)号: US06855649B2公开(公告)日: 2005-02-15
- 发明人: Silke H. Christiansen , Jack O. Chu , Alfred Grill , Patricia M. Mooney
- 申请人: Silke H. Christiansen , Jack O. Chu , Alfred Grill , Patricia M. Mooney
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser
- 代理商 Robert M. Trepp, Esq.
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; H01L21/265 ; H01L21/762 ; H01L21/00
摘要:
A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 106 cm2. The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.