发明授权
- 专利标题： Damascene finfet gate with selective metal interdiffusion
- 专利标题（中）： 大马士革finfet门与选择性金属相互扩散
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申请号： US10674520申请日： 2003-10-01
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公开(公告)号： US06855989B1公开(公告)日： 2005-02-15
- 发明人: Haihong Wang , Shibly S. Ahmed , Ming-Ren Lin , Bin Yu
- 申请人： Haihong Wang , Shibly S. Ahmed , Ming-Ren Lin , Bin Yu
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity & Snyder, LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L27/01 ; H01L29/423 ; H01L29/49 ; H01L29/786
摘要：
A fin field effect transistor includes a fin, a source region, a drain region, a first gate electrode and a second gate electrode. The fin includes a channel. The source region is formed adjacent a first end of the fin and the drain region is formed adjacent a second end of the fin. The first gate electrode includes a first layer of metal material formed adjacent the fin. The second gate electrode includes a second layer of metal material formed adjacent the first layer. The first layer of metal material has a different work function than the second layer of metal material. The second layer of metal material selectively diffuses into the first layer of metal material via metal interdiffusion.
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