- 专利标题： Stacked local interconnect structure and method of fabricating same
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申请号： US10407957申请日： 2003-04-04
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公开(公告)号： US06858525B2公开(公告)日： 2005-02-22
- 发明人: Jigish D. Trivedi
- 申请人： Jigish D. Trivedi
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/535 ; H01L21/476
摘要：
A method is provided for forming stacked local interconnects that do not extend into higher levels within a multilevel IC device, thereby economizing space available within the IC device and increasing design flexibility. In a first embodiment, the method of the present invention provides a stacked local interconnect which electrically connects a first group of interconnected electrical features with one or more additional isolated groups of interconnected electrical features or one or more isolated individual electrical features. In a second embodiment, the method of the present invention provides a stacked local interconnect which electrically connects an individual electrical feature to one or more additional isolated electrical features.
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