公开(公告)号：US06858525B2

公开(公告)日：2005-02-22

申请号：US10407957

申请日：2003-04-04

申请人： Jigish D. Trivedi

发明人： Jigish D. Trivedi

IPC分类号： H01L21/768 ,  H01L23/535 ,  H01L21/476

CPC分类号： H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for forming stacked local interconnects that do not extend into higher levels within a multilevel IC device, thereby economizing space available within the IC device and increasing design flexibility. In a first embodiment, the method of the present invention provides a stacked local interconnect which electrically connects a first group of interconnected electrical features with one or more additional isolated groups of interconnected electrical features or one or more isolated individual electrical features. In a second embodiment, the method of the present invention provides a stacked local interconnect which electrically connects an individual electrical feature to one or more additional isolated electrical features.