发明授权
- 专利标题： Evaluation method for evaluating insulating film, evaluation device therefor and method for manufacturing evaluation device
- 专利标题（中）： 绝缘膜评价方法，评价装置及评价装置的制造方法
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申请号： US10218485申请日： 2002-08-15
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公开(公告)号： US06859023B2公开(公告)日： 2005-02-22
- 发明人: Michinari Yamanaka , Takayuki Yamada , Hiroaki Nakaoka , Takeshi Yamashita
- 申请人： Michinari Yamanaka , Takayuki Yamada , Hiroaki Nakaoka , Takeshi Yamashita
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2001-247970 20010817
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; G01R31/00 ; H01L21/00 ; H01L23/58
摘要：
A method for evaluating an insulating film includes: a first step of forming an insulating film on a semiconductor substrate including a p-n junction therein; a second step of selectively forming an electrode pattern on the insulating film; a third step of forming a measurement electrode on the insulating film so as to be electrically insulated from the electrode pattern; and a fourth step of applying a measurement voltage between the measurement electrode and the semiconductor substrate via the insulating film and measuring a leakage current leaking through the p-n junction so as to evaluate a damage to the insulating film or the semiconductor substrate.