发明授权
- 专利标题： Bump formation method
- 专利标题（中）： 凹凸形成法
-
申请号： US10149651申请日： 2000-10-23
-
公开(公告)号： US06861370B1公开(公告)日： 2005-03-01
- 发明人: Yasushi Kasatani
- 申请人： Yasushi Kasatani
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 国际申请： PCTJP00/07400 WO 20001023
- 国际公布： WO0235602 WO 20020502
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/485 ; H01L21/302
摘要：
A bump formation method and a bump formation apparatus can be gained wherein the reliability of a semiconductor device is enhanced by removing satellites that may be generated by a solder jet-type nozzle. This bump formation method is a method forming a bump on an electrode pad (2) provided on a work piece (1) by using a nozzle (21) of a solder jet system that discharges a molten solder drop (8) and is provided with the coating layer formation step of forming a coating layer (3, 5, 6, 7) having a portion that temporarily protects the work piece (1), the solder drop discharging step of discharging a molten solder drop (8) from the nozzle (21) toward the electrode pad (2) after the coating layer formation step and the coating layer removal step of removing the coating layer (3, 5, 6, 7) in the region other than the region beneath the solder drop formed in the solder drop discharging step.
信息查询
IPC分类:
