发明授权
- 专利标题： Vacuum processing method and semiconductor device manufacturing method in which high-frequency powers having mutually different frequencies are applied to at least one electrode
- 专利标题（中）： 真空处理方法和半导体器件制造方法，其中具有相互不同频率的高频功率被施加到至少一个电极
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申请号： US10011776申请日： 2001-12-11
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公开(公告)号： US06861373B2公开(公告)日： 2005-03-01
- 发明人: Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
- 申请人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2000-377338 20001212; JP2001-017011 20010125; JP2001-210932 20010711; JP2001-360908 20011127
- 主分类号： H05H1/46
- IPC分类号： H05H1/46 ; C23C16/505 ; G03G5/08 ; G03G5/082 ; H01J37/32 ; H01L21/205 ; G03G5/00
摘要：
A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.
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