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    Deposited film forming apparatus and deposited film forming method
    3.
    发明授权
    Deposited film forming apparatus and deposited film forming method 失效
    沉积成膜装置和沉积膜形成方法

    公开(公告)号：US06946167B2

    公开(公告)日：2005-09-20

    申请号：US10691514

    申请日：2003-10-24

    Applicant: Kazuto Hosoi ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

    Inventor： Kazuto Hosoi ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

    IPC: G03G5/08 ,  C23C16/50 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  C23C16/00

    CPC classification number: H01J37/32623 ,  C23C16/509

    Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

    Abstract translation: 为了提高等离子体的均匀性和长期的稳定性，可以容易地形成具有优异的厚度和质量均匀性以及良好的重复性和抑制图像缺陷的发生的膜，并且大大地提高了产率以形成准备进行批量生产的沉积膜，特别是 在包括能够被气密抽真空的反应容器的设备中形成功能性沉积膜（例如，用于半导体器件的非晶半导体，电子照相感光构件，光伏器件等），反应容器中的衬底保持器 ，源气源，高频电源。 在每个基板保持器，源气体供应和电源的端部设置端盖部件。

    Plasma processing method and method for manufacturing semiconductor device
    4.
    发明授权
    Plasma processing method and method for manufacturing semiconductor device 失效
    等离子体处理方法及制造半导体器件的方法

    公开(公告)号：US06849123B2

    公开(公告)日：2005-02-01

    申请号：US10195398

    申请日：2002-07-16

    Applicant: Hiroaki Niino ,  Toshiyasu Shirasuna ,  Hitoshi Murayama ,  Makoto Aoki

    Inventor： Hiroaki Niino ,  Toshiyasu Shirasuna ,  Hitoshi Murayama ,  Makoto Aoki

    IPC: G03G5/08 ,  C23C16/24 ,  C23C16/32 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L31/18 ,  H01L31/20 ,  C30B25/10

    CPC classification number: H01J37/32082 ,  C23C16/24 ,  C23C16/325 ,  C23C16/509 ,  H01J37/32165 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

    Abstract: To plasma-process a substrate having a large area uniformly at a high process speed to form a deposition film with uniform thickness and quality and favorable characteristics. A first high frequency power (with a frequency f1 and a power P1) and a second high frequency power (with a frequency f2 and a power P2) supplied to an electrode from a first high frequency power supply and a second high frequency power supply, respectively, are set so that the frequencies are equal to or higher than 10 MHz and equal to or lower than 250 MHz, a ratio of the frequency f2 to the frequency f1 (f2/f1) is equal to or higher than 0.1 and equal to or lower than 0.9, and a ratio of the power P2 to a total power (P1+P2) is equal to or higher than 0.1 and equal to or lower than 0.9. The frequency f2 is changed during processing the substrate.

    Abstract translation: 为了以高处理速度对具有大面积均匀的基板进行等离子体处理，以形成均匀厚度和质量以及良好特性的沉积膜。 从第一高频电源和第二高频电源提供给电极的第一高频功率（具有频率f1和功率P1）和第二高频功率（具有频率f2和功率P2） 分别被设定为使得频率等于或高于10MHz且等于或低于250MHz，频率f2与频率f1（f2 / f1）的比率等于或高于0.1并且等于 或低于0.9，功率P2与总功率（P1 + P2）的比例等于或大于0.1且等于或低于0.9。 频率f2在处理衬底期间改变。

    Apparatus and method for forming deposited film
    5.
    发明授权
    Apparatus and method for forming deposited film 失效
    用于形成沉积膜的装置和方法

    公开(公告)号：US06486045B2

    公开(公告)日：2002-11-26

    申请号：US09851552

    申请日：2001-05-10

    Applicant: Takashi Otsuka ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Daisuke Tazawa ,  Kazuto Hosoi

    Inventor： Takashi Otsuka ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Daisuke Tazawa ,  Kazuto Hosoi

    IPC: H01L2120

    CPC classification number: H01J37/32082 ,  C23C16/24 ,  C23C16/507

    Abstract: In order to make possible formation of a deposited film of a relatively large area at a treatment rate which could not accomplished by the plasma process of the prior art, and in order to make possible stable production of the deposited film without variation in film quality, in an apparatus and a method for forming a deposited film, a part of a reaction vessel is formed of a dielectric member, at least one high-frequency electrode is arranged so as to face at least one substrate with interposition of the dielectric member, an earth shield is arranged so as to cover the reaction vessel and the high-frequency electrode, plasma is generated between the high-frequency electrode and the substrate, and a deposited film is formed under the conditions in which the following equation: 0.8×(&egr;2/d3)

    Abstract translation: 为了可能以现有技术的等离子体处理不能实现的处理速率形成相对较大面积的沉积膜，为了使膜的质量不变，可以稳定地生产沉积膜， 在用于形成沉积膜的装置和方法中，反应容器的一部分由电介质构成，至少一个高频电极布置成面对至少一个具有电介质构件的衬底， 布置覆盖反应容器和高频电极的接地屏蔽层，在高频电极和基板之间产生等离子体，并且在满足以下等式的条件下形成沉积膜：其中d1 是介电部件的厚度，d2是从高频电极表面到电介质部件的距离，d3是与高频电极表面的距离 ncy电极到接地屏蔽的内表面，epsi1是电介质构件的介电常数，epsi2是反应容器和接地屏蔽之间的空间的介电常数。

    Plasma CVD apparatus and plasma processing method
    6.
    发明授权
    Plasma CVD apparatus and plasma processing method 失效
    等离子体CVD装置和等离子体处理方法

    公开(公告)号：US06435130B1

    公开(公告)日：2002-08-20

    申请号：US08916540

    申请日：1997-08-22

    Applicant: Satoshi Takaki ,  Yoshio Segi ,  Atsushi Yamagami ,  Hiroyuki Katagiri ,  Hitoshi Murayama ,  Yasuyoshi Takai

    Inventor： Satoshi Takaki ,  Yoshio Segi ,  Atsushi Yamagami ,  Hiroyuki Katagiri ,  Hitoshi Murayama ,  Yasuyoshi Takai

    IPC: C23C16509

    CPC classification number: H01J37/32091 ,  C23C16/24 ,  C23C16/45578 ,  C23C16/509 ,  G03G5/08278

    Abstract: A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said substrate holding means having a subtrate positioned thereon and said cathode electrode whereby plasma-processing said substrate, characterized in that said cathode electrode comprises a plurality of conductor members situated on substantially the same axis which are capacitively coupled by a dielectric member. A plasma-processing method using said cathode electrode.

    Abstract translation: 一种等离子体CVD装置，包括：基本封闭的反应室，其包含基板保持装置和布置在其中的阴极电极，其中来自高频电源的高频功率被提供给所述阴极，以在所述基板保持装置之间产生等离子体，所述基板保持装置具有位于 在其上和所述阴极电极，由此对所述衬底进行等离子体处理，其特征在于，所述阴极包括位于基本上相同的轴上的多个导体构件，所述多个导体构件通过电介质构件电容耦合。1。一种使用所述阴极电极的等离子体处理方法。

    Light-receiving member and methods of producing light-receiving member
    8.
    发明授权
    Light-receiving member and methods of producing light-receiving member 失效
    光接收部件和光接收部件的制造方法

    公开(公告)号：US5516611A

    公开(公告)日：1996-05-14

    申请号：US224730

    申请日：1994-04-08

    Applicant: Satoshi Kojima ,  Hirokazu Ohtoshi ,  Hitoshi Murayama

    Inventor： Satoshi Kojima ,  Hirokazu Ohtoshi ,  Hitoshi Murayama

    IPC: G03G5/08 ,  G03G5/082 ,  H01L31/0376 ,  G03G5/085

    CPC classification number: H01L31/03762 ,  G03G5/08228 ,  Y02E10/548

    Abstract: In order to improve characteristics of a light-receiving member for electrophotography having a photoconductive layer comprising an amorphous silicon material and implement a method for facilitating designing of a layer structure, the present invention provides a light-receiving member which is formed by depositing in sequence a photoconductive layer which comprises a non-monocrystalline material comprising silicon atoms as a main element and a surface layer on a conductive substrate, wherein the photoconductive layer comprises at least hydrogenated amorphous silicon which contains at least carbon atoms and boron atoms and the boron atom content in the photoconductive layer in a direction of film thickness is varied in a correlation of exponential functions with respect to the carbon atom content in the photoconductive layer in the direction of film thickness, and a method for producing the light-receiving member by forming a layer while controlling a charge of a starting gas for the boron atoms in the correlation of exponential functions with respect to a charge of a starting gas for the carbon atoms.

    Abstract translation: 为了改善具有包含非晶硅材料的光电导层的电子照相用光接收元件的特性，并且实现了便于设计层结构的方法，本发明提供了一种光接收元件，其通过依次沉积形成 光电导层，其包含包含硅原子作为主要元素的非单晶材料和导电基底上的表面层，其中光电导层至少包含含至少碳原子和硼原子的氢化非晶硅，硼原子含量 在膜厚方向的光导电层中，指数函数相对于光电导层中的碳原子含量在膜厚方向上的相关性变化，以及通过形成层的光接收部件的制造方法 同时控制b的起始气体的电荷 指数函数相对于碳原子的起始气体的电荷相关的原子。

    Plasma treatment apparatus
    10.
    发明授权
    Plasma treatment apparatus 失效
    等离子体处理装置

    公开(公告)号：US06761128B2

    公开(公告)日：2004-07-13

    申请号：US09899188

    申请日：2001-07-06

    Applicant: Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

    Inventor： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

    IPC: H01L2100

    CPC classification number: C23C16/24 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32183 ,  H05H1/46

    Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

    Abstract translation: 在通过利用通过高频电源装置将高频电力提供给内部抽真空电抗器而产生的辉光放电来处理目标衬底表面的等离子体处理方法和装置中，多个阻抗调节装置 对应于多个电抗器的阻抗设置在电抗器一侧和高频电源装置一侧上的调节阻抗，并且高频电力通过对应于 反应堆。 可以在具有不同阻抗的多个反应器中以高效率和低成本进行等离子体处理。

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