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US06864415B2 Photoelectric cell and process for producing metal oxide semiconductor film for use in photoelectric cell 失效
光电池用光电池用金属氧化物半导体膜的制造方法

Photoelectric cell and process for producing metal oxide semiconductor film for use in photoelectric cell
摘要：
A photoelectric cell that includes a first insulating base, having on its surface a first electrode layer, which has on its surface a metal oxide semiconductor film, which includes anatase titanium oxide particles, on which a photosensitizer is absorbed and a second insulating base having on its surface a second electrode layer and an electrolyte sealed between the metal oxide semiconductor film and the second electrode layer. The first electrode layer and the second electrode layer are arranged opposite from each other. At least one of the first and second insulating bases with an electrode layer is transparent.
摘要（中）：

一种光电单元，包括第一绝缘基底，在其表面上具有第一电极层，该第一电极层在其表面上具有金属氧化物半导体膜，该金属氧化物半导体膜包括锐钛矿型氧化钛颗粒，在其上吸收光敏剂，第二绝缘基底上具有 其表面是密封在金属氧化物半导体膜和第二电极层之间的第二电极层和电解质。 第一电极层和第二电极层彼此相对布置。 具有电极层的第一和第二绝缘基底中的至少一个是透明的。

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