- 专利标题: Semiconductor integrated circuit device
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申请号: US10412264申请日: 2003-04-14
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公开(公告)号: US06865127B2公开(公告)日: 2005-03-08
- 发明人: Masatoshi Hasegawa , Shuichi Miyaoka
- 申请人: Masatoshi Hasegawa , Shuichi Miyaoka
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权: JP2002-119411 20020422
- 主分类号: G11C11/41
- IPC分类号: G11C11/41 ; G11C7/10 ; G11C7/12 ; G11C11/407 ; G11C11/4076 ; G11C11/409 ; G11C7/00
摘要:
The present invention provides a semiconductor integrated circuit device equipped with a memory circuit, which realizes speeding up of its operation in a simple configuration or realizes high reliability and enhancement of product yields in a simple configuration. A memory cell is selected from within a memory array having a plurality of memory cells by a selector or selection circuit. MOSFETs constituting a precharge circuit provided for signal lines for transferring a read signal therefrom to a main amplifier are respectively brought to an on state based on a memory cell select start signal transferred to the selection circuit and brought to an off state prior to the transfer of the read signal from the memory cell to thereby complete precharging, whereby NBTI degradation at standby is avoided.
公开/授权文献
- US20030198110A1 Semiconductor integrated circuit device 公开/授权日:2003-10-23