发明授权
- 专利标题： Solution-processed thin film transistor formation method
- 专利标题（中）： 溶液处理薄膜晶体管的形成方法
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申请号： US10633208申请日： 2003-07-31
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公开(公告)号： US06867081B2公开(公告)日： 2005-03-15
- 发明人: Jian-gang Weng , David M. Kwasny , David Orr
- 申请人： Jian-gang Weng , David M. Kwasny , David Orr
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： H01L51/00
- IPC分类号： H01L51/00 ; H01L51/05 ; H01L51/30 ; H01L51/40 ; H01L21/336 ; H01L21/8234
摘要：
An exemplary solution-processed thin film transistor formation method of the invention forms solution-processed thin film layers into a transistor structure. During formation, semiconductor portions of the transistor structure are selectively heated via a laser to modify the material state of semiconductor material from a solution deposited material state to a thin film layer material state.
公开/授权文献
- US20050026344A1 SOLUTION-PROCESSED THIN FILM TRANSISTOR FORMATION METHOD 公开/授权日：2005-02-03
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