发明授权
- 专利标题： Method for exposing a photosensitive resist layer with near-field light
- 专利标题（中）： 用近场光使光敏抗蚀剂层曝光的方法
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申请号： US10768129申请日： 2004-02-02
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公开(公告)号： US06869737B2公开(公告)日： 2005-03-22
- 发明人: Keiji Suzuki , Hideki Ookawa , Junichi Tonotani
- 申请人： Keiji Suzuki , Hideki Ookawa , Junichi Tonotani
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： JP2003-026399 20030203; JP2003-206104 20030805
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; H01L21/027 ; G03F9/00 ; H01L21/302
摘要：
In a method for exposing a photosensitive resist layer with near-field light, a liquid film layer is provided between the photosensitive resist layer and a photomask. The photomask has a light-shielding film containing an opening portion through which a propagated light emitted from a light source cannot pass. The photosensitive resist layer is exposed with near-field light through the opening portion and the liquid film layer.