发明授权
US06870213B2 EEPROM device with substrate hot-electron injector for low-power
失效
具有基板热电子注入器的EEPROM器件，用于低功耗
- 专利标题： EEPROM device with substrate hot-electron injector for low-power
- 专利标题（中）： 具有基板热电子注入器的EEPROM器件，用于低功耗
-
申请号： US10143291申请日： 2002-05-10
-
公开(公告)号： US06870213B2公开(公告)日： 2005-03-22
- 发明人: Jin Cai , Tak Hung Ning
- 申请人： Jin Cai , Tak Hung Ning
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 George Sai-Halasz; Robert M. Trepp
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L21/84 ; H01L27/115 ; H01L27/12 ; H01L29/788 ; H01L29/76
摘要：
A low programming power, high speed EEPROM device is disclosed which is adapted for large scale integration. The device comprises a body, a source, a drain, and it has means for injecting a programming current into the body. The hot carriers from the body enter the floating gate with much higher efficiency than channel current carriers are capable of doing. The drain current of this device is controlled by the body bias. The device is built on an insulator, with a bottom common plate, and a top side body. These features make the device ideal for SOI and thin film technologies.
公开/授权文献
信息查询
