发明授权
US06870256B2 Semiconductor device having a thin-film circuit element provided above an integrated circuit
失效
具有设置在集成电路上方的薄膜电路元件的半导体器件
- 专利标题： Semiconductor device having a thin-film circuit element provided above an integrated circuit
- 专利标题（中）： 具有设置在集成电路上方的薄膜电路元件的半导体器件
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申请号： US10254222申请日： 2002-09-25
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公开(公告)号： US06870256B2公开(公告)日： 2005-03-22
- 发明人: Yutaka Aoki , Ichiro Mihara , Takeshi Wakabayashi , Katsumi Watanabe
- 申请人： Yutaka Aoki , Ichiro Mihara , Takeshi Wakabayashi , Katsumi Watanabe
- 申请人地址： JP Tokyo
- 专利权人： Casio Computer Co., Ltd.
- 当前专利权人： Casio Computer Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Frishauf, Holtz, Goodman & Chick, P.C.
- 优先权： JP11-035759 19990215
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L20060101 ; H01L21/60 ; H01L21/822 ; H01L23/50 ; H01L23/52 ; H01L23/522 ; H01L27/00 ; H01L27/04 ; H01L29/40 ; H01L31/00
摘要：
In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.
公开/授权文献
- US20030038331A1 Semiconductor device having a barrier layer 公开/授权日：2003-02-27
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