发明授权
- 专利标题： Semiconductor electret capacitor microphone
- 专利标题（中）： 半导体驻极体电容麦克风
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申请号： US09926429申请日： 2001-04-19
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公开(公告)号： US06870938B2公开(公告)日： 2005-03-22
- 发明人: Takanobu Takeuchi , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki
- 申请人： Takanobu Takeuchi , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki
- 申请人地址： JP Tokyo JP Yao
- 专利权人： Mitsubishi Denki Kabushiki Kaisha,Hosiden Corporation
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha,Hosiden Corporation
- 当前专利权人地址： JP Tokyo JP Yao
- 代理机构： Armstrong, Kratz, Quintos, Hanson & Brooks, LLP
- 优先权： JP2000-125399 20000426
- 国际申请： PCTJP01/03371 WO 20010419
- 国际公布： WO0182649 WO 20011101
- 主分类号： H04R1/04
- IPC分类号： H04R1/04 ; H04R1/06 ; H04R3/00 ; H04R19/00 ; H04R19/01 ; H04R25/00
摘要：
A semiconductor electret capacitor microphone includes a vibration membrane, a semiconductor chip on which are formed a necessary electronic circuit, a fixed electrode, a spacer for preserving a predetermined space between the fixed electrode and the vibration membrane, and a case for enclosing the semiconductor chip and the vibration membrane in such a configuration that the fixed electrode is connected to the ground and the vibration membrane is connected to an input electrode of the semiconductor chip.
公开/授权文献
- US20020172384A1 Semiconductor electret capacitor microphone 公开/授权日：2002-11-21