发明授权
- 专利标题： Silylation treatment unit and method
- 专利标题（中）： 甲硅烷基化处理装置及方法
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申请号： US10752556申请日： 2004-01-08
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公开(公告)号： US06872670B2公开(公告)日： 2005-03-29
- 发明人: Takayuki Toshima , Tsutae Omori , Masami Yamashita
- 申请人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP11-328269 19991118
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; G03F7/20 ; G03F7/26 ; H01L21/00 ; H01L21/31
摘要：
A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.
公开/授权文献
- US20040142580A1 Silylation treatment unit and method 公开/授权日：2004-07-22
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