发明授权
- 专利标题： High capacity MRAM memory array architecture
- 专利标题（中）： 高容量MRAM存储阵列架构
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申请号： US10080396申请日： 2002-02-22
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公开(公告)号： US06873547B1公开(公告)日： 2005-03-29
- 发明人: Xizeng(Stone) Shi , Hua-Ching Tong , Aric K. Menon
- 申请人： Xizeng(Stone) Shi , Hua-Ching Tong , Aric K. Menon
- 申请人地址： US CA Fremont
- 专利权人： Read Rite Corporation
- 当前专利权人： Read Rite Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Sawyer Law Group
- 代理商 Joshua C. Harrison, Esq.; Milad G. Shara, Esq.
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/16
摘要：
A magnetic memory is disclosed. The magnetic memory includes a first magnetic tunneling junction and a reference magnetic tunneling junction. The first magnetic tunneling junction includes a first ferromagnetic layer, a second ferromagnetic layer and a first insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The reference magnetic tunneling junction includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second insulating layer between the third ferromagnetic layer and the fourth ferromagnetic layer. The magnetic memory also includes means for comparing a first output of the first magnetic tunneling junction with a reference output of the reference magnetic tunneling junction.
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